• DocumentCode
    921080
  • Title

    Measurement of admittance of Gunn diodes in passive and active regions of bias voltage

  • Author

    de Waard, P.J.

  • Author_Institution
    Philips Research Laboratories, Eindhoven, Netherlands
  • Volume
    9
  • Issue
    3
  • fYear
    1973
  • Firstpage
    59
  • Lastpage
    60
  • Abstract
    The transfer function of the microwave circuit to the diode chip is obtained for a Gunn diode by combining 10 GHz admittance measurements with the measurement of the low-frequency differential resistance, which is a function of the bias voltage. The transfer parameters thus found can be used to calculate the admittance of an oscillating diode.
  • Keywords
    Gunn diodes; admittance measurement; microwave measurement; solid-state microwave devices; transfer functions; 10 GHZ; Gunn diodes; admittance measurement; microwave measurements; solid state microwave devices; transfer functions;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19730042
  • Filename
    4235978
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=921080