Title :
VCSEL Based on InAs Quantum-Dashes With a Lasing Operation Over a 117-nm Wavelength Span
Author :
Taleb, Fadia ; Levallois, C. ; Paranthoen, C. ; Gauthier, Jean-Paul ; Chevalier, N. ; Perrin, M. ; Leger, Y. ; De Sagazan, Olivier ; Le Corre, A.
Author_Institution :
INSA, FOTON, Rennes, France
Abstract :
We report an InP based vertical cavity surface emitting laser (VCSEL) achieving a lasing operation between 1529 and 1646 nm. This optically-pumped VCSEL includes a wide-gain bandwidth active region based on InAs quantum dashes and wideband dielectric Bragg mirrors. Based on a wedge microcavity design, we obtain a spatial dependence of the resonant wavelength along the wafer, enabling thus to monitor the gain material bandwidth. We demonstrate a 117 nm continuous wavelength variation of the VCSEL emission, a consequence of the important and wide gain afforded by the use of optimized quantum dashes.
Keywords :
III-V semiconductors; indium compounds; laser cavity resonators; laser mirrors; laser transitions; optical pumping; quantum dash lasers; surface emitting lasers; InP-InAs; indium arsenide quantum dashes; laser transitions; optically-pumped VCSEL; vertical cavity surface emitting laser; wavelength 117 nm; wavelength 1529 nm to 1646 nm; wedge microcavity design; wide-gain bandwidth active region; wideband dielectric Bragg mirrors; Cavity resonators; Indium phosphide; Measurement by laser beam; Optical pumping; Vertical cavity surface emitting lasers; Wavelength measurement; Quantum dash lasers; semiconductor lasers; vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2013.2282084
