• DocumentCode
    921309
  • Title

    Microwave frequency division using transferred-electron devices

  • Author

    Upadhyayula, L.C. ; Narayan, S.Y.

  • Author_Institution
    RCA Laboratories, Microwave Technology Center, Princeton, USA
  • Volume
    9
  • Issue
    4
  • fYear
    1973
  • Firstpage
    85
  • Lastpage
    86
  • Abstract
    Transferred-electron devices (t.e.d.s), when biased above threshold (Vth) exhibit transit-time or circuit-controlled oscillations. This property of t.e.d.s is used to achieve dynamic division at microwave frequencies. The device is biased at 0.9¿0.95 Vth using a d.c. power source, and an input signal of 0.1¿0.3 Vth, is used to raise the device bias above threshold level. The division occurs when the input frequency is an integral multiple of the oscillator frequency. We observed dynamic division by 2, 3 and 4 with the output frequency 4.0 GHz. The bandwidth for division by two is 560 MHz referred to the input.
  • Keywords
    frequency dividers; solid-state microwave devices; transferred electron devices; frequency dividers; negative resistance; solid state microwave devices; transferred electron devices;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19730064
  • Filename
    4236001