Use of noise thermometry to study the effects of self-heating in submicrometer SOI MOSFETs

Author

Bunyan, R.J.T. ; Uren, M.J. ; Alderman, J.C. ; Eccleston, W.

Author_Institution

DRA Electron Div., Malvern, UK

Volume

13

Issue

5

fYear

1992

fDate

5/1/1992 12:00:00 AM

Firstpage

279

Lastpage

281

Abstract

The authors report the direct measurement of the silicon island temperature in both long and submicrometer thin-film silicon-on-insulator (SOI) MOSFETs as a function of bias conditions using noise thermometry. They show that the device island temperature increases with drain voltage and that this results in a reduction of drain current. Using standard models of the drain current and velocity/field expression, they show that a thermally induced fall in mobility quantitatively accounts for the loss in drain current drive observed.<>

Keywords

carrier mobility; electron device noise; insulated gate field effect transistors; semiconductor-insulator boundaries; temperature distribution; temperature measurement; Si-SiO/sub 2/; bias conditions; drain current; drain voltage; island temperature; noise thermometry; self-heating; submicrometre SOI MOSFET; thermally induced mobility fall; velocity/field expression; Circuits; Electrical resistance measurement; Immune system; MOSFETs; Noise measurement; Resistors; Silicon; Temperature; Thermal resistance; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.145053

Filename

145053