DocumentCode
921331
Title
Measurement of carrier-concentration profiles in epitaxial indium phosphide
Author
Cardwell, M.J. ; Peart, R.F.
Author_Institution
Plessey Company Limited, Allen Clark Research Centre, Towcester, UK
Volume
9
Issue
4
fYear
1973
Firstpage
88
Lastpage
89
Abstract
A technique is described for measuring carrier-concentration profiles of vapour-deposited epitaxial indium phosphide using the capacitance/voltage characteristics of a reverse biased metal-insulator-semiconductor diode. Profiles of layers grown on chromium and tin-doped substrates are presented. The effect of dopant type on the sharpness of electrical interfaces is discussed.
Keywords
III-V semiconductors; carrier density; indium compounds; semiconductor doping; semiconductor materials testing; Cr; III V semiconductors; Sn; capacitance/voltage characteristics; carrier density; epitaxial indium phosphide; semiconductor doping; semiconductor materials testing; substrates;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19730066
Filename
4236003
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