Title :
Measurement of carrier-concentration profiles in epitaxial indium phosphide
Author :
Cardwell, M.J. ; Peart, R.F.
Author_Institution :
Plessey Company Limited, Allen Clark Research Centre, Towcester, UK
Abstract :
A technique is described for measuring carrier-concentration profiles of vapour-deposited epitaxial indium phosphide using the capacitance/voltage characteristics of a reverse biased metal-insulator-semiconductor diode. Profiles of layers grown on chromium and tin-doped substrates are presented. The effect of dopant type on the sharpness of electrical interfaces is discussed.
Keywords :
III-V semiconductors; carrier density; indium compounds; semiconductor doping; semiconductor materials testing; Cr; III V semiconductors; Sn; capacitance/voltage characteristics; carrier density; epitaxial indium phosphide; semiconductor doping; semiconductor materials testing; substrates;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19730066
