DocumentCode
921454
Title
Transistor input parameter variations indicating high-gain frequency multiplication properties
Author
O´Clock, G.D., Jr.
Volume
60
Issue
2
fYear
1972
Firstpage
244
Lastpage
245
Abstract
Transistors exhibiting abrupt input parameter variations with input voltage often yield enhanced frequency multiplication properties. The parameters that can be measured and utilized as high-gain frequency multiplication indicators are discussed.
Keywords
Atomic measurements; Capacitance; Capacitance-voltage characteristics; Cathodes; Electrodes; Frequency conversion; Frequency measurement; Lenses; Radio frequency; Voltage;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1972.8613
Filename
1450543
Link To Document