DocumentCode
921458
Title
Overlength modes of transferred-electron oscillators
Author
Jones, D. ; Rees, H.D.
Author_Institution
Royal Radar Establishment, Great Malvern, UK
Volume
9
Issue
5
fYear
1973
Firstpage
105
Lastpage
106
Abstract
Simulations of n+¿n¿n+ GaAs devices show three régimes where the operating frequency substantially exceeds the normal transit frequency. The efficiency/frequency characteristics and the effects of length and carrier density differ from predictions for an idealised I.s.a. mode.
Keywords
gallium arsenide; microwave oscillators; solid-state microwave devices; transferred electron devices; GaAs; microwave oscillators; overlength modes; transferred electron device;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19730077
Filename
4236015
Link To Document