Title :
Metal-nitride--oxide--silicon avalanche-injection memory
Author_Institution :
University of Edinburgh, Electrical Engineering Department, School of Engineering Science, Edinburgh, UK
Abstract :
Memory operation is shown to be exhibited by avalanche injection of charge into the gate dielectric of an m.n.o.s. transistor. The performance of the memory is dependent upon the transistor source--drain spacing and the avalanche condition.
Keywords :
electron avalanches; field effect transistors; semiconductor storage devices; MNOST; avalanche injection memory;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19730081
