• DocumentCode
    921612
  • Title

    n- and p-channel m.o.s.f.e.t.s as Rayleigh-surface-wave detectors

  • Author

    Defranould, Ph.

  • Author_Institution
    Thomson-CSF, ASM Division, Cagnes-sur-Mer, France
  • Volume
    9
  • Issue
    6
  • fYear
    1973
  • Firstpage
    125
  • Lastpage
    126
  • Abstract
    We have studied the piezoresistance effect in an m.o.s.f.e.t. structure used as a Rayleigh-surface-wave transducer. The investigation was carried out over a large frequency range about a central value of 100 MHz. Results for silicon¿m.o.s.f.e.t. n- and p- channel inversion layers are given.
  • Keywords
    Rayleigh waves; acoustic surface wave devices; field effect transistors; MOSFET; Rayleigh surface wave detector; piezoresistance effect;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19730092
  • Filename
    4236031
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=921612