DocumentCode
921909
Title
Short-pulse modulation of gallium-arsenide lasers with TRAPATT diodes
Author
Carroll, J.E. ; Farrington, J.G.
Author_Institution
University of Cambridge, Engineering Department, Cambridge, UK
Volume
9
Issue
7
fYear
1973
Firstpage
166
Lastpage
167
Abstract
TRAPATT diodes producing current pulses with a halfwidth of 150 ps at a repetition rate around 1 GHz have been used to modulate successfully a double-heterostructure gallium-arsenide laser.
Keywords
avalanche diodes; gallium arsenide; laser accessories; optical modulation; pulse modulation; semiconductor lasers; solid-state microwave devices; transit time devices; 1 GHZ; GaAs; avalanche diodes; double heterostructure; optical modulation; pulse modulation; semiconductor lasers; transit-time devices;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19730123
Filename
4236063
Link To Document