Simulation and Modeling-implementing GaAs device models with SPICE

Author

Goyal, R.

Author_Institution

Mentor Graphics Corp., Beaverton, OR, USA

Volume

8

Issue

2

fYear

1992

fDate

3/1/1992 12:00:00 AM

Firstpage

9

Lastpage

13

Abstract

A method for evaluating the accuracy of a device model and its tendency toward convergence problems before implementing it as a SPICE primitive is presented. Two different GaAs MESFET models suitable for analyzing nonlinear analog and microwave circuits are implemented using generic SPICE primitives. It is shown that no modification to the SPICE program is required. Controlled sources are extensively used in implementing the models using this method.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; circuit analysis computing; digital simulation; equivalent circuits; gallium arsenide; microwave circuits; nonlinear network analysis; semiconductor device models; solid-state microwave devices; GaAs device; MESFET; SPICE primitive; controlled sources; convergence problems; device model; nonlinear analog circuits; nonlinear microwave circuits; Algorithm design and analysis; Circuit analysis; Computer aided analysis; Gallium arsenide; Iterative algorithms; Iterative methods; SPICE; Sparse matrices; Transient analysis; Voltage control;

fLanguage

English

Journal_Title

Circuits and Devices Magazine, IEEE

Publisher

ieee

ISSN

8755-3996

Type

jour

DOI

10.1109/101.127307

Filename

127307