Title :
Fabrication and characteristics of tapered waveguide semiconductor Raman lasers
Author :
Suto, K. ; Kimu, T. ; Nishizawa, J.
Author_Institution :
Fac. of Eng., Tohoku Univ., Sendai, Japan
fDate :
4/1/1996 12:00:00 AM
Abstract :
Low pump-power operation of GaP semiconductor Raman lasers with a tapered waveguide structure is reported. The waveguides are both laterally and vertically tapered and fabricated by the temperature difference method under controlled vapour pressure with liquid-phase epitaxy and an improved growth process, which has not caused any serious increase of internal optical loss. The lowest threshold pump power of 55 mW has been achieved
Keywords :
III-V semiconductors; Raman lasers; gallium compounds; liquid phase epitaxial growth; optical fabrication; optical pumping; semiconductor growth; semiconductor lasers; waveguide lasers; 55 mW; GaP; GaP semiconductor Raman lasers; controlled vapour pressure; improved growth process; internal optical loss; laterally tapered; liquid-phase epitaxy; low pump-power operation; lowest threshold pump power; tapered waveguide semiconductor Raman lasers; tapered waveguide structure; temperature difference method; vertically tapered;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:19960238
