DocumentCode
921992
Title
Fabrication and characteristics of tapered waveguide semiconductor Raman lasers
Author
Suto, K. ; Kimu, T. ; Nishizawa, J.
Author_Institution
Fac. of Eng., Tohoku Univ., Sendai, Japan
Volume
143
Issue
2
fYear
1996
fDate
4/1/1996 12:00:00 AM
Firstpage
113
Lastpage
118
Abstract
Low pump-power operation of GaP semiconductor Raman lasers with a tapered waveguide structure is reported. The waveguides are both laterally and vertically tapered and fabricated by the temperature difference method under controlled vapour pressure with liquid-phase epitaxy and an improved growth process, which has not caused any serious increase of internal optical loss. The lowest threshold pump power of 55 mW has been achieved
Keywords
III-V semiconductors; Raman lasers; gallium compounds; liquid phase epitaxial growth; optical fabrication; optical pumping; semiconductor growth; semiconductor lasers; waveguide lasers; 55 mW; GaP; GaP semiconductor Raman lasers; controlled vapour pressure; improved growth process; internal optical loss; laterally tapered; liquid-phase epitaxy; low pump-power operation; lowest threshold pump power; tapered waveguide semiconductor Raman lasers; tapered waveguide structure; temperature difference method; vertically tapered;
fLanguage
English
Journal_Title
Optoelectronics, IEE Proceedings -
Publisher
iet
ISSN
1350-2433
Type
jour
DOI
10.1049/ip-opt:19960238
Filename
499846
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