Small-signal gain measurement in a Ti:Al/sub 2/O/sub 3/ amplifier

Author

Wall, Kevin F. ; Aggarwal, Roshan L. ; Fahey, Robert E. ; Strauss, Alan J.

Author_Institution

MIT Lincoln Lab., Lexington, MA, USA

Volume

24

Issue

6

fYear

1988

fDate

6/1/1988 12:00:00 AM

Firstpage

1016

Lastpage

1020

Abstract

A small-signal single-pass power gain of e/sup 5.2/=180 has been measured for a signal in the pi polarization at 790.7 nm in a longitudinally pumped Ti:Al/sub 2/O/sub 3/ amplifier. A double-pass power gain of e/sup 5.2/ approximately=10/sup 4/ has been attained for the same polarization at 799.8 nm. The ratio of the gain cross sections at 632.8 and 790.7 nm is 1/25. The gain anisotropy at 632.8 nm is g/sub pi //g/sub sigma /=2.3. The lifetime of the upper lasing level decreases with increased pumping, probably as the result of amplified spontaneous emission.<>

Keywords

optical pumping; radiative lifetimes; sapphire; solid lasers; superradiance; titanium; 632.8 nm; 790.7 nm; 799.8 nm; Al/sub 2/O/sub 3/:Ti; Ti:Al/sub 2/O/sub 3/ amplifier; amplified spontaneous emission; double-pass power gain; gain anisotropy; gain cross sections; lifetime; longitudinally pumped; pi polarization; polarization; pumping; sapphire; small-signal single-pass power gain; upper lasing level; Absorption; Detectors; Gain measurement; Laser beams; Laser excitation; Mirrors; Polarization; Pulse amplifiers; Pump lasers; Turning;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.223

Filename

223