Title :
A 1.45-W/mm, 30-GHz InP-channel power HEMT
Author :
Aina, Olaleye ; Burgess, M. ; Mattingly, M. ; Meerschaert, A. ; O´Connor, James M. ; Tong, M. ; Ketterson, A. ; Adesida, Ilesanmi
Author_Institution :
Allied-Signal Aerosp. Co., Columbia, MD, USA
fDate :
5/1/1992 12:00:00 AM
Abstract :
The authors report the fabrication of the first AlInAs/InP power HEMT with a saturated power density of 1.45 W/mm, a maximum power-added efficiency of 24%, and a large signal gain of 6.2 dB at 30 GHz. The authors show that the estimated power performance of this device at the highest frequencies is better than for any three-terminal devices because the f/sub t/ of the power HEMT is high, even at high drain-source bias.<>
Keywords :
III-V semiconductors; aluminium compounds; high electron mobility transistors; indium compounds; power transistors; solid-state microwave devices; 24 percent; 30 GHz; 6.2 dB; AlInAs-InP; MM-wave frequency; cutoff frequency; large signal gain; power HEMT; power-added efficiency; saturated power density; Degradation; Electron mobility; Fabrication; Frequency estimation; HEMTs; Indium phosphide; Millimeter wave technology; Millimeter wave transistors; Power generation; Power transistors;
Journal_Title :
Electron Device Letters, IEEE
