Boron redistribution at the oxide--silicon interface during drive-in in oxidising atmospheres

A modified form of the Kato and Nishi solution for computing boron redistribution at the moving oxide--silicon interface is presented, its advantages are discussed, and its accuracy is checked by extensive boron drive-in experiments carried out in oxidising atmospheres. A segregation coefficient k = 4, practically not influenced by either the boron-doping concentration or the silicon-oxidation rate, is suggested.