Distributed phase shifter with pyrochlore bismuth zinc niobate thin films

Author

Park, Jaehoon ; Lu, Jiwei W. ; Boesch, Damien S. ; Stemmer, Susanne ; York, Robert A.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

16

Issue

5

fYear

2006

fDate

5/1/2006 12:00:00 AM

Firstpage

264

Lastpage

266

Abstract

A monolithic Ku-band phase shifter employing voltage tunable Bi_1.5Zn_1.0Nb_1.5O₇ (BZN) thin film parallel plate capacitors is reported. BZN films were deposited by radio frequency magnetron sputtering on single-crystal sapphire substrates. A nine-section distributed coplanar waveguide loaded-line phase-shifter structure was designed. A differential phase shift of 175° was achieved with a maximum insertion loss of 3.5 dB at 15 GHz, giving a figure of merit ∼50°/dB. To the best of our knowledge, this is the first demonstration of a monolithic tunable microwave circuit using BZN thin films.

Keywords

MMIC phase shifters; bismuth compounds; circuit tuning; coplanar waveguide components; dielectric thin films; sputtered coatings; thin film circuits; zinc compounds; 15 GHz; 3.5 dB; BZN thin films; Bi_1.5Zn_1.0Nb_1.5O₇; distributed coplanar waveguide; distributed phase shifter; loaded-line phase-shifter; monolithic Ku-band phase shifter; monolithic tunable microwave circuit; pyrochlore bismuth zinc niobate thin films; radio frequency magnetron sputtering; single-crystal sapphire substrates; voltage tunable thin film parallel plate capacitors; Bismuth; Capacitors; Niobium compounds; Phase shifters; Radio frequency; Sputtering; Transistors; Tunable circuits and devices; Voltage; Zinc; Bismuth zinc niobate (BZN); coplanar waveguides (CPW); nonferroelectric; phase shifters; thin films; tunable dielectric;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2006.873528

Filename

1626255