• DocumentCode
    922473
  • Title

    Behaviour of burst noise under mechanical stress

  • Author

    Rodríguez, T. ; Mulet, J. ; Luque, A.

  • Author_Institution
    Universidad Politécnica de Madrid, Laboratorio de Semiconductores, Escuela Superior de Telecomunicación, Madrid, Spain
  • Volume
    9
  • Issue
    11
  • fYear
    1973
  • Firstpage
    248
  • Lastpage
    249
  • Abstract
    Measurements of the amplitude and statistical parameters of burst noise when a transistor is subjected to external mechanical stress are presented. The parameters measured are the number of bursts per second and the average duration of the burst and no-burst states.
  • Keywords
    bipolar transistors; noise; semiconductor device testing; stress effects; bipolar transistors; burst noise; noise; semiconductor device testing; stress effects;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19730179
  • Filename
    4236122
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=922473