High-performance oscillators and power combiners with InP Gunn devices at 260-330 GHz

Author

Eisele, Heribert ; Kamoua, Ridha

Author_Institution

Inst. of Microwaves & Photonics, Leeds Univ., UK

Volume

16

Issue

5

fYear

2006

fDate

5/1/2006 12:00:00 AM

Firstpage

284

Lastpage

286

Abstract

InP Gunn devices with graded doping profiles were evaluated for second-harmonic power extraction above 260 GHz. The best devices generated radio frequency(RF) output power levels of 3.9 mW at 275 GHz, 4.8 mW at 282 GHz, 3.7 mW at 297 GHz, 1.6 mW at 329 GHz, and 0.7 mW at 333 GHz with corresponding dc-to-RF conversion efficiencies of 0.24%, 0.31%, 0.32%, 0.19%, and 0.07%. The highest observed second-harmonic frequency was 345 GHz. Two devices each in an in-line power combining circuit generated 6.1 mW at 285 GHz and 2.7 mW at 316 GHz with combining efficiencies of more than 65%.

Keywords

Gunn oscillators; III-V semiconductors; doping profiles; indium compounds; millimetre wave oscillators; power combiners; submillimetre wave oscillators; 0.7 to 6.1 mW; 260 to 330 GHz; InP; InP Gunn devices; doping profiles; high-performance oscillators; power combiners; power combining circuit; radio frequency output power levels; second-harmonic frequency; second-harmonic power extraction; Circuits; Doping profiles; Gunn devices; Heat sinks; Indium phosphide; Millimeter wave technology; Oscillators; Power combiners; Power generation; Radio frequency; Gunn devices; millimeter-wave devices; millimeter-wave generation; millimeter-wave oscillators; oscillator noise; phase noise; power combining; submillimeter-wave devices; submillimeter-wave generation; submillimeter-wave oscillators;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2006.873498

Filename

1626262