DocumentCode
922507
Title
Hg1-xCdxTe metal-semiconductor-metal (MSM) photodetectors
Author
Leech, Patrick W. ; Stumpf, Erich ; Petkovic, Novica ; Cahill, Laurie W.
Author_Institution
Telecom Res. Lab., Clayton, Vic., Australia
Volume
40
Issue
8
fYear
1993
fDate
8/1/1993 12:00:00 AM
Firstpage
1364
Lastpage
1370
Abstract
Metal-semiconductor-metal (MSM) detectors with active layers of Hg 1-xCdxTe (x =0.62-0.74) and electrode spacings of 2, 4, and 6 μm have been fabricated and characterized. Direct-current measurements have shown a low dark current and high responsivity from 0.15 to 1.5 A/W at 10-V bias. The lowest values of dark current (0.16 mA cm2) were obtained for detectors which incorporated an overlayer of CdTe. For detectors without the overlayer, increasing the Cd mole fraction resulted in a decrease in the dark current and a reduction in the 300-nm responsivity. Measurements of frequency response for these detectors show a maximum loss of 8 dB to 20 GHz. These results compare favorably with high-performance MSM detectors based on In0.53Ga0.47As with a lattice-matched barrier layer of In0.52Al0.48As
Keywords
II-VI semiconductors; cadmium compounds; frequency response; mercury compounds; metal-semiconductor-metal structures; photodetectors; 2 to 6 micron; 20 GHz; 8 dB; Hg1-xCdxTe; MSM; active layers; dark current; electrode spacings; frequency response; overlayer; photodetectors; responsivity; Current measurement; Dark current; Detectors; Electrodes; Frequency measurement; Gallium arsenide; MOCVD; Mercury (metals); Photodetectors; Tellurium;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.223693
Filename
223693
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