Collector design tradeoffs for low voltage applications of advanced bipolar transistors

The values of BV_ceo are computed for transistors with highly doped collectors and with thin reach-through collectors, using various sets of ionization coefficients including new data. Computed values of BV_ceo are compared with experimental results. It is shown that transistors with thin reach-through collectors have higher current capability for any given BV_ceo compared to those with highly doped collectors. Tradeoffs in terms of BV_ceo, maximum collector current and the maximum frequency of operation are studied for transistors with highly doped and thin reach-through collectors