DocumentCode
922675
Title
Effects of nonuniform doping on generation-lifetime measurement in m.o.s. capacitors
Author
Calzolari, P.U. ; Graffi, S. ; Morandi, Carlo
Author_Institution
Istituto di Elettronica, FacoltÃ\xa0 di Ingegneria, Bologna, Italy
Volume
9
Issue
12
fYear
1973
Firstpage
273
Lastpage
274
Abstract
A theoretical investigation of the transient behaviour of an m.o.s. capacitor pulsed into inversion shows that current and capacitance measurements provide a reliable method for the evaluation of the bulk generation lifetime, even in the presence of moderately nonuniform doping concentrations.
Keywords
electron-hole recombination; metal-insulator-semiconductor structures; semiconductor doping; MOS capacitors; bulk generation lifetime; evaluation; nonuniform doping effects; transient behaviour;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19730198
Filename
4236142
Link To Document