Title :
Avalanche effects in bulk InP microwave diode oscillators
Author :
Jervis, B.W. ; Hobson, G.S.
fDate :
6/1/1972 12:00:00 AM
Abstract :
An association with current runaway of nontransit frequency oscillations in bulk InP oscillators is plausibly interpreted as an avalanche generation process.
Keywords :
Alloying; Breakdown voltage; Circuit optimization; Diodes; Frequency; Gallium arsenide; Indium phosphide; Microwave oscillators; Pulse circuits; Tin;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1972.8730
