Investigation of the impact ionization in the hydrodynamic model

Author

Souissi, Kamel ; Odeh, Farouk ; Tang, Henry H K ; Gnudi, Antonio ; Lu, Pong-Fei

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

40

Issue

8

fYear

1993

fDate

8/1/1993 12:00:00 AM

Firstpage

1501

Lastpage

1507

Abstract

The effects of impact ionization are studied in the framework of a standard hydrodynamic model. Three prescriptions of impact ionization are implemented in the device simulator HFIELDS. They are: (1) a model of Scholl and Quade developed from the Boltzmann transport equation; (2) an empirical model of Baccarani and Stork; and (3) a postprocessor method. Three thin-base Si bipolar devices are simulated. The numerical results show that over a certain range of electric field, the multiplication factors simulated from the Scholl-Quade model, and the Baccarani-Stork model agree very well with the experiment. At very high fields, these models tend to underestimate the net generation rate. Invoking the postprocessor technique, good agreement is found between simulation and experiment. However, at high fields the postprocessor method can lead to erroneous base and collector currents. The limitations of the Scholl-Quade model and how it can be extended for high-field applications are considered

Keywords

Boltzmann equation; bipolar transistors; elemental semiconductors; impact ionisation; semiconductor device models; silicon; Baccarani-Stork model; Boltzmann transport equation; HFIELDS; Scholl-Quade model; Si; base currents; bipolar devices; collector currents; device simulator; electric field; empirical model; hydrodynamic model; impact ionization; multiplication factors; net generation rate; postprocessor technique; Boltzmann equation; Conductors; Electrons; Hydrodynamics; Impact ionization; Laboratories; Numerical models; Physics; Research and development; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.223711

Filename

223711