• DocumentCode
    922722
  • Title

    Characteristics of bilateral MOS-controlled thyristors (BMCT)

  • Author

    Huang, J.S.T.

  • Author_Institution
    Honeywell Inc., Plymouth, MN, USA
  • Volume
    40
  • Issue
    8
  • fYear
    1993
  • fDate
    8/1/1993 12:00:00 AM
  • Firstpage
    1523
  • Lastpage
    1529
  • Abstract
    The operation of the continuous-gate-control BMCT and the interrupted-gate-control BMCT is described and compared. Particular attention is focused on the analysis of the turn-on and turn-off characteristics. The result provides useful guidelines for designing these devices. Parameters such as the minimum MOS gate voltages required for turn-on and turn-off and the maximum controllable current are analytically derived and experimentally verified. Switching tests using fabricated devices indicate that BMCT is capable of handling current exceeding 800 A/cm2 with a turn-off time less than 1 μs for discrete devices
  • Keywords
    metal-insulator-semiconductor devices; thyristors; bilateral MOS-controlled thyristors; continuous-gate-control BMCT; interrupted-gate-control BMCT; maximum controllable current; minimum MOS gate voltages; turn-off characteristics; turn-off time; CMOS technology; Charge carrier processes; Circuits; Electron emission; Guidelines; MOSFETs; Resistors; Threshold voltage; Thyristors; Voltage control;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.223714
  • Filename
    223714
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=922722