Title :
Characteristics of bilateral MOS-controlled thyristors (BMCT)
Author_Institution :
Honeywell Inc., Plymouth, MN, USA
fDate :
8/1/1993 12:00:00 AM
Abstract :
The operation of the continuous-gate-control BMCT and the interrupted-gate-control BMCT is described and compared. Particular attention is focused on the analysis of the turn-on and turn-off characteristics. The result provides useful guidelines for designing these devices. Parameters such as the minimum MOS gate voltages required for turn-on and turn-off and the maximum controllable current are analytically derived and experimentally verified. Switching tests using fabricated devices indicate that BMCT is capable of handling current exceeding 800 A/cm2 with a turn-off time less than 1 μs for discrete devices
Keywords :
metal-insulator-semiconductor devices; thyristors; bilateral MOS-controlled thyristors; continuous-gate-control BMCT; interrupted-gate-control BMCT; maximum controllable current; minimum MOS gate voltages; turn-off characteristics; turn-off time; CMOS technology; Charge carrier processes; Circuits; Electron emission; Guidelines; MOSFETs; Resistors; Threshold voltage; Thyristors; Voltage control;
Journal_Title :
Electron Devices, IEEE Transactions on
