Title :
GaP electroluminescent memory switch
Author_Institution :
University of Manchester Institute of Science & Technology, Department of Electrical Engineeritig & Electronics, Manchester, UK
Abstract :
M.I.S. structures in which the semiconductor is GaP and the insulator a native oxide of GaP exhibit switchtng and non volatile memory properties as well as electroluminescence that is green under forward bias and orange under reverse bias. The switching and memory properties are thought to be due to a forming process in the oxide layer.
Keywords :
III-V semiconductors; electrical conductivity transitions; electroluminescence; metal-insulator-semiconductor devices; semiconductor storage devices; semiconductor switches; GaP; III-V semiconductors; electrical conductivity transitions; electroluminescence; memory properties; metal insulator semiconductor structures; semiconductor storage devices; semiconductor switches;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19730203
