• DocumentCode
    922770
  • Title

    Discharge treatment of W-Si system for silicidation

  • Author

    Singh, Awatar ; Vyas, P.D. ; Khokle, W.S. ; Singh, Chatar ; Lal, K.

  • Author_Institution
    CEERI, Pilani, India
  • Volume
    40
  • Issue
    8
  • fYear
    1993
  • fDate
    8/1/1993 12:00:00 AM
  • Firstpage
    1551
  • Lastpage
    1553
  • Abstract
    An extremely reliable tungsten silicide is formed by reacting tungsten film with silicon wafer. The tungsten film is RF magnetron sputter-deposited onto a silicon wafer and is subjected to a novel discharge treatment. As a result, an amorphous tungsten silicide is produced. An effective tungsten silicide with tetragonal end phase and low sheet resistance forms when the sample is suitably vacuum-annealed at high temperature
  • Keywords
    annealing; metallisation; sputtered coatings; tungsten compounds; RF magnetron sputter-deposited; WSi2; discharge treatment; metallisation; sheet resistance; silicidation; tetragonal end phase; vacuum-annealed; Amorphous magnetic materials; Annealing; Radio frequency; Semiconductor films; Silicidation; Silicides; Silicon; Sputtering; Tungsten; X-ray diffraction;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.223720
  • Filename
    223720
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=922770