Title :
Electrical characteristics of aluminum-CVD diamond-silicon structures
Author :
Alam, Mansoor ; Gomez-Yanez, C.
Author_Institution :
Dept. of Mater. & Metall. Eng., New Mexico Inst. of Mining & Technol., Socorro, NM, USA
fDate :
8/1/1993 12:00:00 AM
Abstract :
The behavior of aluminum-CVD (chemical vapor deposited) diamond film-silicon structures has been studied as a function of the temperature of the hot filament used to prepare the diamond film. As the filament temperature increases from 2173 to 2373 K, diamond-film surface roughness and crystallite size increase, nondiamond carbon content decreases, and device behavior changes from ohmic to Schottky. The diamond-film resistivity in all cases is substantially lower than that of bulk natural diamond and decreases with increasing filament temperature, perhaps due to increased incorporation of hydrogen in the films
Keywords :
Schottky effect; aluminium; chemical vapour deposition; diamond; elemental semiconductors; semiconductor-metal boundaries; silicon; 2173 to 2373 K; Al-C-Si; CVD; Schottky behaviour; Si; crystallite size; device behavior; diamond-film resistivity; diamond-film surface roughness; filament temperature; hot filament; nondiamond carbon content; Aluminum; Conductivity; Electric variables; Hydrogen; Ohmic contacts; Powders; Power supplies; Rough surfaces; Surface roughness; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
