Electrical characteristics of aluminum-CVD diamond-silicon structures

Author

Alam, Mansoor ; Gomez-Yanez, C.

Author_Institution

Dept. of Mater. & Metall. Eng., New Mexico Inst. of Mining & Technol., Socorro, NM, USA

Volume

40

Issue

8

fYear

1993

fDate

8/1/1993 12:00:00 AM

Firstpage

1554

Lastpage

1556

Abstract

The behavior of aluminum-CVD (chemical vapor deposited) diamond film-silicon structures has been studied as a function of the temperature of the hot filament used to prepare the diamond film. As the filament temperature increases from 2173 to 2373 K, diamond-film surface roughness and crystallite size increase, nondiamond carbon content decreases, and device behavior changes from ohmic to Schottky. The diamond-film resistivity in all cases is substantially lower than that of bulk natural diamond and decreases with increasing filament temperature, perhaps due to increased incorporation of hydrogen in the films

Keywords

Schottky effect; aluminium; chemical vapour deposition; diamond; elemental semiconductors; semiconductor-metal boundaries; silicon; 2173 to 2373 K; Al-C-Si; CVD; Schottky behaviour; Si; crystallite size; device behavior; diamond-film resistivity; diamond-film surface roughness; filament temperature; hot filament; nondiamond carbon content; Aluminum; Conductivity; Electric variables; Hydrogen; Ohmic contacts; Powders; Power supplies; Rough surfaces; Surface roughness; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.223721

Filename

223721