DocumentCode
922790
Title
Deep-level effects on forward characteristics of rectifying contacts on semiconducting diamond
Author
Venkatesan, V. ; von Windheim, J.A. ; Das, K.
Author_Institution
Kobe Steel USA Inc., Research Triangle Park, NC, USA
Volume
40
Issue
8
fYear
1993
fDate
8/1/1993 12:00:00 AM
Firstpage
1556
Lastpage
1558
Abstract
Current-voltage characteristics of P-doped polycrystalline Si, Au, and Pt contacts on naturally occurring semiconducting (100) diamond crystals are investigated. Logarithmic plots of the forward characteristics of these rectifying contacts indicate a space-charge-limited current conduction that is influenced by the presence of deep-level states. A simple analysis of these characteristics is used to identify various deep-level states in the energy range 0.5-0.8 eV above the valence band
Keywords
deep levels; diamond; semiconductor-metal boundaries; solid-state rectifiers; space-charge-limited conduction; current-voltage characteristics; deep-level states; forward characteristics; rectifying contacts; semiconducting diamond; space-charge-limited current conduction; Crystalline materials; Crystallization; Crystals; Electron traps; Fabrication; Gold; Schottky diodes; Semiconductivity; Semiconductor diodes; Semiconductor materials;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.223722
Filename
223722
Link To Document