DocumentCode :
922796
Title :
Low-temperature (
Author :
King, Tsu-Jae ; Saraswat, Krishna C.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., CA, USA
Volume :
13
Issue :
6
fYear :
1992
fDate :
6/1/1992 12:00:00 AM
Firstpage :
309
Lastpage :
311
Abstract :
High performance n- and p-channel thin-film transistors (TFTs) have been fabricated in polycrystalline silicon films using a self-aligned-gate process without exceeding 550 degrees C. This process features the use of polycrystalline Si/sub 0.5/Ge/sub 0.5/ for the gate material and high-dose H/sup +/ implantation for grain-boundary passivation so that shorter process times can be used. Low threshold voltages of 2.8 and -0.2 V, and high field-effect mobilities of 35 and 28 cm/sup 2//V-s, where achieved by the NMOS and PMOS devices, respectively. The performance of these devices is comparable to that of previously reported devices fabricated using process temperatures up to 600 degrees C, and is adequate for large-area-display peripheral driver circuits. The significant reduction in maximum process temperature makes this process advantageous for the fabrication of CMOS circuits on large-area glass substrates.<>
Keywords :
CMOS integrated circuits; carrier mobility; elemental semiconductors; ion implantation; passivation; silicon; thin film transistors; 550 degC; CMOS circuits; NMOS devices; PMOS devices; Si/sub 0.5/Ge/sub 0.5/; Si:H; TFTs; field-effect mobilities; grain-boundary passivation; high-dose H/sup +/ implantation; large-area glass substrates; large-area-display peripheral driver circuits; n-channel devices; p-channel devices; polycrystalline Si films; process temperatures; self-aligned-gate process; thin-film transistors; threshold voltages; CMOS process; Driver circuits; Fabrication; MOS devices; Passivation; Semiconductor films; Silicon; Temperature; Thin film transistors; Threshold voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.145067
Filename :
145067
Link To Document :
