High-Performance Blue InGaN Laser Diodes With Single-Quantum-Well Active Layers

Author

Ryu, H.Y. ; Ha, K.H. ; Lee, S.N. ; Jang, T. ; Son, J.K. ; Paek, H.S. ; Sung, Y.J. ; Kim, H.K. ; Kim, K.-S. ; Nam, O.H. ; Park, Y.J. ; Shim, J.I.

Author_Institution

Samsung Adv. Inst. of Technol., Suwon

Volume

19

Issue

21

fYear

2007

Firstpage

1717

Lastpage

1719

Abstract

The authors report on the high-performance blue laser diodes (LDs) with an emission wavelength of ~448 nm employing InGaN single-quantum-well (QW) active layers. At 100-mW continuous-wave (CW) output power, operation current and voltage are, respectively, 150 mA and 5.3 V, corresponding to the wall plug efficiency of >12%, a record value for the single-mode InGaN LDs with blue wavelengths. The single QW blue LD showed normal temperature dependence of light output-current curves with the characteristic temperature of 170 K. In addition, we demonstrate a high level of catastrophic optical damage of >300 mW and long device lifetime under CW operation condition at room temperature.

Keywords

III-V semiconductors; gallium compounds; indium compounds; laser beams; quantum well lasers; III-V semiconductors; InGaN; blue InGaN laser diodes; catastrophic optical damage; current 150 mA; light output-current curves; power 100 mW; single-quantum-well active layers; temperature 170 K; voltage 5.3 V; Charge carrier processes; Diode lasers; Laboratories; Light sources; Plugs; Power generation; Stimulated emission; Temperature dependence; Threshold current; Voltage; (In)GaN; Blue laser; laser diode (LD); single quantum well (QW);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2007.905215

Filename

4343133