• DocumentCode
    922842
  • Title

    Low threshold-current density in 5-layer-heterostructure (GaAl)As/GaAs localised-gain-region injection lasers

  • Author

    Thompson, G.H.B. ; Kirkby, P.A.

  • Author_Institution
    Standard Telecommunication Laboratories Ltd., Harlow, UK
  • Volume
    9
  • Issue
    13
  • fYear
    1973
  • Firstpage
    295
  • Lastpage
    296
  • Abstract
    Injection lasers have been constructed in which an active GaAs layer is sandwiched between a pair of (GaAl)As layers for carrier confinement and an outer pair of (GaAl)As layers of higher AlAs content for optical confinement. The minimum threshold-current density measured at 300 K. is 575±15 A/cm2 for 0.5 mm-long devices and 390 A/cm2 for lasers with four reflecting faces.
  • Keywords
    III-V semiconductors; carrier density; gallium arsenide; semiconductor lasers; carrier density; gallium arsenide; heterostructure; low threshold current density; semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19730214
  • Filename
    4236159
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=922842