DocumentCode
922909
Title
High-field transport in indium phosphide
Author
Fawcett, W. ; Herbert, D.C.
Author_Institution
Royal Radar Establishment, Great Malvern, UK
Volume
9
Issue
14
fYear
1973
Firstpage
308
Lastpage
309
Abstract
Theoretical estimates of intervalley scattering rates in InP are used to determine velocity/field curves. The results do not support the 3-level model of high-field transport in this material.
Keywords
III-V semiconductors; electron mobility; high field effects; indium compounds; III-V semiconductors; electron mobility; highfield effects; indium compounds; velocity/field curves;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19730221
Filename
4236167
Link To Document