• DocumentCode
    922909
  • Title

    High-field transport in indium phosphide

  • Author

    Fawcett, W. ; Herbert, D.C.

  • Author_Institution
    Royal Radar Establishment, Great Malvern, UK
  • Volume
    9
  • Issue
    14
  • fYear
    1973
  • Firstpage
    308
  • Lastpage
    309
  • Abstract
    Theoretical estimates of intervalley scattering rates in InP are used to determine velocity/field curves. The results do not support the 3-level model of high-field transport in this material.
  • Keywords
    III-V semiconductors; electron mobility; high field effects; indium compounds; III-V semiconductors; electron mobility; highfield effects; indium compounds; velocity/field curves;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19730221
  • Filename
    4236167