Title :
A comparative study of IMPATT diode noise properties
Author :
Levine, P.A. ; Chan, V.W.
fDate :
6/1/1972 12:00:00 AM
Abstract :
The amplifier and oscillator noise properties of IMPATT diodes fabricated with diffused and epitaxial p+-n junctions in both Si and GaAs have been measured. Circuit parameters which effect noise have been held constant in order to obtain a valid comparison. The GaAs epitaxially grown junction p+-n diodes were found to have the best noise properties.
Keywords :
Circuit noise; Dielectric losses; Diodes; Gallium arsenide; Light scattering; Optical amplifiers; Optical films; Optical noise; Optical scattering; Optical waveguides;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1972.8754
