Abstract :
Data showing the radiation effects of 10-MeV electrons on the operating characteristics of GaAs Schottky barrier IMPATT diodes are presented. The percentage of decrease in RF power level is shown to be a function of both the radiation dose rate and the nonradiated oscillator power level. However, the decrease is shown to be independent of the radiation pulse length between 0.1 and 4.5 µs. In addition, the diode recovery times are found to be the same as the radiation pulse turnoff time.
