DocumentCode
923039
Title
Transient radiation effects in GaAs IMPATT diodes
Author
Greiling ; Clark, J.
Volume
60
Issue
6
fYear
1972
fDate
6/1/1972 12:00:00 AM
Firstpage
753
Lastpage
754
Abstract
Data showing the radiation effects of 10-MeV electrons on the operating characteristics of GaAs Schottky barrier IMPATT diodes are presented. The percentage of decrease in RF power level is shown to be a function of both the radiation dose rate and the nonradiated oscillator power level. However, the decrease is shown to be independent of the radiation pulse length between 0.1 and 4.5 µs. In addition, the diode recovery times are found to be the same as the radiation pulse turnoff time.
Keywords
Electrons; Gallium arsenide; Power generation; Pulse measurements; Radiation effects; Radio frequency; Schottky barriers; Schottky diodes; Testing; Voltage;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1972.8762
Filename
1450692
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