Title :
Comments on "An analytical two-dimensional perturbation method to model submicron GaAs MESFET\´s" [with reply]
Author :
Kukreja, Nupul ; Gupta, R.S.
Author_Institution :
Dept. of Electron. Sci., Delhi Univ., New Delhi, India
fDate :
3/1/1993 12:00:00 AM
Abstract :
The commenter report that they have found serious discrepancies in the above-titled paper by E. Donker and F. C. Jain (ibid., vol.37, no.9, p.1484-7, Sept. 1989). Particularly in the potential expression and the equation governing the current-voltage characteristics of GaAs MESFET. Moreover, they found that the model is valid until the linear regime and not in the saturation regime. Dankor and Jain reply that their results are correct as stated, and they provide further discussion of their work.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; perturbation techniques; semiconductor device models; solid-state microwave devices; GaAs; I/V characteristics; current-voltage characteristics; linear regime; model; saturation regime; submicron MESFET; two-dimensional perturbation method; Analytical models; Boundary conditions; Gallium arsenide; MESFETs; Perturbation methods; Poisson equations; Voltage;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
