DocumentCode
923125
Title
Comments on "An analytical two-dimensional perturbation method to model submicron GaAs MESFET\´s" [with reply]
Author
Kukreja, Nupul ; Gupta, R.S.
Author_Institution
Dept. of Electron. Sci., Delhi Univ., New Delhi, India
Volume
41
Issue
3
fYear
1993
fDate
3/1/1993 12:00:00 AM
Firstpage
543
Lastpage
545
Abstract
The commenter report that they have found serious discrepancies in the above-titled paper by E. Donker and F. C. Jain (ibid., vol.37, no.9, p.1484-7, Sept. 1989). Particularly in the potential expression and the equation governing the current-voltage characteristics of GaAs MESFET. Moreover, they found that the model is valid until the linear regime and not in the saturation regime. Dankor and Jain reply that their results are correct as stated, and they provide further discussion of their work.<>
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; perturbation techniques; semiconductor device models; solid-state microwave devices; GaAs; I/V characteristics; current-voltage characteristics; linear regime; model; saturation regime; submicron MESFET; two-dimensional perturbation method; Analytical models; Boundary conditions; Gallium arsenide; MESFETs; Perturbation methods; Poisson equations; Voltage;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/22.223761
Filename
223761
Link To Document