Author :
Kerr, J.A. ; Slatter, J.A.G. ; Vinton, D.
Author_Institution :
Philips Research Laboratories, Redhill, UK
Abstract :
Measurements have been made on microwave transistors with different amounts of total base doping. It has been found that, as the total base doping is reduced, the parameters Veb, RB, hfe and gob show the effects expected from a smaller basedoping density and width, but the fT remains approximately constant.
Keywords :
bipolar transistors; microwave measurement; semiconductor device models; solid-state microwave devices; bipolar transistors; microwave measurements; microwave transistors; semiconductor device models; semiconductor doping;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19730244
