• DocumentCode
    923229
  • Title

    Oxide charge buildup and spread-out during channel-hot-carrier injection in NMOSFETs

  • Author

    Chen, Wenliang ; Ma, Tso-Ping

  • Author_Institution
    Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
  • Volume
    13
  • Issue
    6
  • fYear
    1992
  • fDate
    6/1/1992 12:00:00 AM
  • Firstpage
    319
  • Lastpage
    321
  • Abstract
    Oxide charge buildup during channel-hot-carrier (CHC) injection was investigated by the use of a modified charge-pumping technique. An apparent \´turnaround\´ effect in local oxide charge density during low gate voltage (V/sub T/>
  • Keywords
    electron traps; hole traps; hot carriers; insulated gate field effect transistors; NMOSFETs; channel length; channel-hot-carrier injection; damage location; electric field distribution; low gate voltage stressing; modified charge-pumping technique; n-MOSFET; n-channel device; oxide charge buildup; oxide charge spreadout; Charge measurement; Charge pumps; Current measurement; Low voltage; MOSFET circuits; Power generation; Pulse measurements; Senior members; Stress measurement; Time measurement;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.145071
  • Filename
    145071
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=923229