• DocumentCode
    923280
  • Title

    Reply to Comment on Metal-nitride--oxide--silicon avalanche-injection memory

  • Author

    Mavor, J.

  • Author_Institution
    University of Edinburgh, School of Engineering Science, Electrical Engineering Department, Edinburgh, UK
  • Volume
    9
  • Issue
    16
  • fYear
    1973
  • Firstpage
    349
  • Keywords
    metal-insulator-semiconductor devices; semiconductor storage devices; MNOS transistors; internal floating gate; semiconductor storage devices;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19730257
  • Filename
    4236205