Title :
Analytic theory for silicon double-sided n+--n--p--p+ TRAPATT-diode structures
Author_Institution :
University of Essex, Department of Physics, Colchester, UK
Abstract :
Previous TRAPATT theories for high-efficiency oscillations in avalanche diodes are extended to apply to double-sided n+--n--p--p+ structures, where TRAPATT-mode operation is assumed to occur in both the n- and p-type drift regions. Results are deduced for silicon devices of various different structures, and an optimum double-sided structure is predicted.
Keywords :
avalanche diodes; electromagnetic oscillations; transit time devices; Si; avalanche diodes; double sided avalanche devices; electromagnetic oscillations; transit time devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19730260
