Title :
A new technique for determining the capacitive coupling coefficients in flash EPROMs
Author :
San, K. Tamer ; Kaya, Çetin ; Liu, David K Y ; Ma, Tso-Ping ; Shah, Pradeep
Author_Institution :
Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
fDate :
6/1/1992 12:00:00 AM
Abstract :
A method for determining the capacitive coupling coefficients of flash erasable programmable read only memories (EPROMs) is introduced. This technique relies on the Fowler-Nordheim erase measurements and source/drain junction leakage characteristics of the device to extract the control gate, source, and drain coupling coefficients. An advantage offered by this method is its use of an actual flash EPROM cell without requiring additional test structures.<>
Keywords :
EPROM; electric variables measurement; integrated circuit testing; integrated memory circuits; leakage currents; Fowler-Nordheim erase measurements; capacitive coupling coefficients; erasable programmable read only memories; flash EPROMs; source/drain junction leakage characteristics; Data mining; EPROM; Electric variables; Electrodes; Equations; Nonvolatile memory; Pulse measurements; Substrates; Testing; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
