• DocumentCode
    923673
  • Title

    A MESFET Model for Use in the Design of GaAs Integrated Circuits

  • Author

    Curtice, Walter R.

  • Volume
    28
  • Issue
    5
  • fYear
    1980
  • fDate
    5/1/1980 12:00:00 AM
  • Firstpage
    448
  • Lastpage
    456
  • Abstract
    A MESFET model is presented that is suitable for use in conventional, time-domain circuit simulation programs. The parameters of the model are evaluated either from experimental data or from more detailed device analysis. The model is shown to be more complete than earlier models, which neglect transit-time and other effects. An integrated circuit (IC) design example is discussed.
  • Keywords
    Analytical models; Circuit simulation; Computational modeling; Electrons; Gallium arsenide; Integrated circuit modeling; Irrigation; MESFET circuits; MESFET integrated circuits; Voltage;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.1980.1130099
  • Filename
    1130099
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=923673