DocumentCode
923683
Title
Low-noise silicon IMPATT structure
Author
Diamand, F.
Author_Institution
Thomson-CSF, Orsay, France
Volume
9
Issue
18
fYear
1973
Firstpage
405
Lastpage
406
Abstract
Improved large-signal noise performance is obtained with a p+¿¿¿nn+ Si IMPATT structure operated as an X band oscillator. A typical result for f.m. noise is 9 Hz/kHz+, with a Q factor of 500.
Keywords
IMPATT diodes; microwave oscillators; noise measurement; solid-state microwave devices; FM; IMPATT diodes; Si; X-band; microwave oscillators; noise measurement;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19730298
Filename
4236248
Link To Document