Title :
Low-noise silicon IMPATT structure
Author_Institution :
Thomson-CSF, Orsay, France
Abstract :
Improved large-signal noise performance is obtained with a p+¿¿¿nn+ Si IMPATT structure operated as an X band oscillator. A typical result for f.m. noise is 9 Hz/kHz+, with a Q factor of 500.
Keywords :
IMPATT diodes; microwave oscillators; noise measurement; solid-state microwave devices; FM; IMPATT diodes; Si; X-band; microwave oscillators; noise measurement;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19730298
