Determination of the Electrode Capacitance Matrix for GaAs FET´s

In this paper, a method is presented which provides the electrode capacitance matrix for GaAs FET´s. The method incorporates a Green´s function, valid for conductors printed on or embedded in a grounded substrate, with the moment method technique. Although calculations for various geometries of printed conductors are considered, emphasis is placed on the computation of self- and mutual-capacitances for the source, gate, drain equivalent circuit of a GaAs FET. As an example, the speed power characteristics of a depletion-rnode GaAs FET inverter circuit are examined, as a function of device width, pad and gate length.