Title :
Power-generation potential of various IMPATT structures from a scaling approximation
Author_Institution :
Hughes Research Laboratories, Torrance, USA
Abstract :
The power potential of the double-drift and both complementary 1-sided silicon IMPATTS is estimated as a function of frequency, using a scaling approximation that accounts for the dependence of generation efficiency on bias-current density. The results show the n+¿p junction IMPATT to be a superior choice for reliable power generation below 25 GHz, owing to its relatively low threshold-current density.
Keywords :
IMPATT devices; current density; microwave generation; solid-state microwave devices; 25 GHz; IMPATT devices; Si; current density; microwave generation; scaling approximation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19730308
