Title :
A diode device combining lateral field-effect transport and vertical tunneling in a multi-quantum-well heterostructure
Author :
Marczewski, J. ; Zachau, M. ; Asenov, A. ; Koch, F. ; Gruetzmacher, D.
Author_Institution :
Dept. of Phys., Tech. Univ., Muenchen, Germany
fDate :
6/1/1992 12:00:00 AM
Abstract :
The authors discuss an electronic device with asymmetric contacts to a InGaAs-InP multilayer heterostructure. Current enters via an alloyed ohmic contact into the quantum wells (QWs) and flows laterally along capacitively coupled channels. It leaves via tunneling between the layers and through a forward-biased surface Schottky contact. A step-like I-V dependence is observed and interpreted by a model calculation.<>
Keywords :
III-V semiconductors; Schottky-barrier diodes; gallium arsenide; indium compounds; semiconductor device models; semiconductor quantum wells; tunnelling; InGaAs-InP-Au; MQW; alloyed ohmic contact; asymmetric contacts; capacitively coupled channels; diode device; forward-biased surface Schottky contact; lateral field-effect transport; model calculation; multi-quantum-well; multilayer heterostructure; multiquantum well; step-like I-V dependence; vertical tunneling; Electrons; HEMTs; Indium phosphide; Ohmic contacts; Quantum well devices; Schottky barriers; Schottky diodes; Semiconductor diodes; Temperature; Tunneling;
Journal_Title :
Electron Device Letters, IEEE
