• DocumentCode
    923970
  • Title

    Solid-phase formation of transistor emitters at low temperature

  • Author

    Fern, A.M. ; McCaldin, J.O.

  • Author_Institution
    Calif. Inst. Tech., Pasadena, Calif.
  • Volume
    60
  • Issue
    8
  • fYear
    1972
  • Firstpage
    1018
  • Lastpage
    1018
  • Abstract
    The solid-phase reaction of evaporated Al on n-type Ge at 310°C was used to form the emitter of a transistor. Hole injection efficiencies as large as 95 percent were observed.
  • Keywords
    Artificial intelligence; Etching; Fabrication; Germanium alloys; Hafnium; Heat treatment; Solid state circuits; Surface finishing; Temperature; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1972.8846
  • Filename
    1450776
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=923970