DocumentCode
924006
Title
Effect of recombination time on efficiency and frequency of operation in GaAs TRAPATT devices
Author
Bauhahn, P.E. ; Haddad, G.I.
Author_Institution
University of Michigan, Electron Physics Laboratory, Department of Electrical & Computer Engineering, Ann Arbor, USA
Volume
9
Issue
19
fYear
1973
Firstpage
455
Abstract
The effect of carrier-recombination lifetimes on the performance of GaAs TRAPATT devices has been determined by a numerical simulation, and the results are presented.
Keywords
electron-hole recombination; electronics applications of computers; semiconductor device models; simulation; transit time devices; GaAs; efficiency; electron hole recombination; numerical simulation; recombination time effect; transit time devices;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19730331
Filename
4236282
Link To Document