Title :
Effect of recombination time on efficiency and frequency of operation in GaAs TRAPATT devices
Author :
Bauhahn, P.E. ; Haddad, G.I.
Author_Institution :
University of Michigan, Electron Physics Laboratory, Department of Electrical & Computer Engineering, Ann Arbor, USA
Abstract :
The effect of carrier-recombination lifetimes on the performance of GaAs TRAPATT devices has been determined by a numerical simulation, and the results are presented.
Keywords :
electron-hole recombination; electronics applications of computers; semiconductor device models; simulation; transit time devices; GaAs; efficiency; electron hole recombination; numerical simulation; recombination time effect; transit time devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19730331
