Title :
Comparison of the hot electron-diffusion rates for GaAs and InP
Author :
Bauhahn, P.E. ; Haddad, G.I. ; Masnari, N.A.
Author_Institution :
University of Michigan, Electron Physics Laboratory, Department of Electrical & Computer Engineering, Ann Arbor, USA
Abstract :
The diffusion coefficients, parallel and transverse to the electric field, have been computed at 300 and 500 K for GaAs, and at 500 K for InP, by a Monte-Carlo method, and the results are presented.
Keywords :
III-V semiconductors; gallium arsenide; high field effects; hot carriers; indium compounds; III-V semiconductors; Monte Carlo method; avalanche devices; diffusion; gallium arsenide; indium compounds; transit time devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19730335
