Title :
Double-pulse charge pumping in MOSFETs
Author_Institution :
Dept. of Microelectron., Czechoslovak Tech. Univ. of Prague, Czechoslovakia
fDate :
6/1/1992 12:00:00 AM
Abstract :
A double-pulse charge-pumping (DPCP) method is described. The method enables measuring of an energy distribution of interface states in both the lower and upper halves of bandgap and allows determination of capture cross section energy distribution for electrons in the upper half of the bandgap in n-channel MOSFETs and for holes in the lower half in p-channel MOSFETs. The method supplements the CP method´s family. Its major advantage consists in enhanced immunity against the parasitic geometrical components of the CP current.<>
Keywords :
insulated gate field effect transistors; interface electron states; MOSFETs; bandgap; capture cross section; double-pulse charge-pumping; energy distribution; interface states; n-channel; p-channel; Charge carrier processes; Charge pumps; Electron emission; Energy capture; Energy measurement; Interface states; MOSFETs; Photonic band gap; Pulse measurements; Voltage;
Journal_Title :
Electron Device Letters, IEEE
