DocumentCode
924129
Title
Double-pulse charge pumping in MOSFETs
Author
Kejhar, Martin
Author_Institution
Dept. of Microelectron., Czechoslovak Tech. Univ. of Prague, Czechoslovakia
Volume
13
Issue
6
fYear
1992
fDate
6/1/1992 12:00:00 AM
Firstpage
344
Lastpage
346
Abstract
A double-pulse charge-pumping (DPCP) method is described. The method enables measuring of an energy distribution of interface states in both the lower and upper halves of bandgap and allows determination of capture cross section energy distribution for electrons in the upper half of the bandgap in n-channel MOSFETs and for holes in the lower half in p-channel MOSFETs. The method supplements the CP method´s family. Its major advantage consists in enhanced immunity against the parasitic geometrical components of the CP current.<>
Keywords
insulated gate field effect transistors; interface electron states; MOSFETs; bandgap; capture cross section; double-pulse charge-pumping; energy distribution; interface states; n-channel; p-channel; Charge carrier processes; Charge pumps; Electron emission; Energy capture; Energy measurement; Interface states; MOSFETs; Photonic band gap; Pulse measurements; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.145079
Filename
145079
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