Title :
X-band silicon double-drift IMPATT diodes using multiple epitaxy
Abstract :
Silicon double-drift IMPATT diodes made by consecutive epitaxial deposition have been fabricated successfully. Output power in excess of 1.7 W with 10-percent efficiency was obtained at X band.
Keywords :
Boron; Charge carrier processes; Epitaxial growth; Epitaxial layers; Frequency; Impedance; Ion implantation; Semiconductor diodes; Silicon; Substrates;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1972.8861
